TMR device with novel free layer structure

ABSTRACT

A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R&gt;60%, λ˜1×10 −6 , and RA=1.2 ohm-um 2  when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.

RELATED PATENT APPLICATIONS

This application is related to the following: Ser. No. 11/983,329,filing date Nov. 8, 2007; and Ser. No. 11/983,718; filing date Nov. 9,2007; both assigned to a common assignee, and which are hereinincorporated by reference in their entirety.

FIELD OF THE INVENTION

The invention relates to a high performance tunneling magnetoresistive(TMR) sensor in a read head and a method for making the same, and inparticular, to a composite free layer in which a non-magnetic layer isinserted between two magnetic layers to achieve a high magnetoresistive(MR) ratio while enabling strong coupling between the magnetic layers.

BACKGROUND OF THE INVENTION

A TMR sensor otherwise known as a magnetic tunneling junction (MTJ) is akey component in magnetic devices such as Magnetic Random Access Memory(MRAM) and a magnetic recording head. A TMR sensor typically has a stackof layers with a configuration in which two ferromagnetic layers areseparated by a thin non-magnetic insulator layer. The sensor stack in aso-called bottom spin valve configuration is generally comprised of aseed (buffer) layer, anti-ferromagnetic (AFM) layer, pinned layer,tunnel barrier layer, free layer, and capping layer that aresequentially formed on a substrate. The free layer serves as a sensinglayer that responds to external fields (media field) while the pinnedlayer is relatively fixed and functions as a reference layer. Theelectrical resistance through the tunnel barrier layer (insulator layer)varies with the relative orientation of the free layer moment comparedwith the reference layer moment and thereby converts magnetic signalsinto electrical signals. In a magnetic read head, the TMR sensor isformed between a bottom shield and a top shield. When a sense current ispassed from the top shield to the bottom shield (or top conductor tobottom conductor in a MRAM device) in a direction perpendicular to theplanes of the TMR layers (CPP designation), a lower resistance isdetected when the magnetization directions of the free and referencelayers are in a parallel state (“1” memory state) and a higherresistance is noted when they are in an anti-parallel state or “0”memory state. Alternatively, a TMR sensor may be configured as a currentin plane (CIP) structure which indicates the direction of the sensecurrent.

A giant magnetoresistive (GMR) head is another type of memory device. Inthis design, the insulator layer between the pinned layer and free layerin the TMR stack is replaced by a non-magnetic conductive layer such ascopper.

In the TMR stack, the pinned layer may have a syntheticanti-ferromagnetic (SyAF) configuration in which an outer pinned layeris magnetically coupled through a coupling layer to an inner pinnedlayer that contacts the tunnel barrier. The outer pinned layer has amagnetic moment that is fixed in a certain direction by exchangecoupling with the adjacent AFM layer which is magnetized in the samedirection. The tunnel barrier layer is so thin that a current through itcan be established by quantum mechanical tunneling of conductionelectrons.

A TMR sensor is currently the most promising candidate for replacing aGMR sensor in upcoming generations of magnetic recording heads. Anadvanced TMR sensor may have a cross-sectional area of about 0.1microns×0.1 microns at the air bearing surface (ABS) plane of the readhead. The advantage of a TMR sensor is that a substantially higher MRratio can be realized than for a GMR sensor. In addition to a high MRratio, a high performance TMR sensor requires a low areal resistance RA(area×resistance) value, a free layer with low magnetostriction (λ) andlow coercivity (Hc), a strong pinned layer, and low interlayer coupling(Hin) through the barrier layer. The MR ratio (also referred to as TMRratio) is dR/R where R is the minimum resistance of the TMR sensor anddR is the change in resistance observed by changing the magnetic stateof the free layer. A higher dR/R improves the readout speed. For highrecording density or high frequency applications, RA must be reduced toabout 1 to 3 ohm-um².

A MgO based MTJ is a very promising candidate for high frequencyrecording applications because its tunneling magnetoresistive (TMR)ratio is significantly higher than for AlOx or TiOx based MTJs asdemonstrated by S. Yuasa et al. in “Giant room-temperaturemagnetoresistance in single crystal Fe/MgO/Fe magnetic tunneljunctions”, Nature Materials, 3, 868-871 (2004), and in “Giant tunnelingmagnetoresistance up to 410% at room temperature in fully epitaxialCo/MgO/Co magnetic tunnel junctions with bcc Co(001) electrodes”, Appl.Phys. Lett., 89, 042505 (2006), and by S. Parkin et al. in “Gianttunneling magnetoresistance at room temperature with MgO (100) tunnelbarriers”, Nature Materials, 3, 862-867 (2004).

CoFeB has been used in the free layer for MgO based MTJs to achieve highMR ratio and a soft magnetic layer. D. Djayaprawira et al. showed thatMTJs with a CoFeB/MgO(001)/CoFeB structure made by conventionalsputtering can also have a very high MR ratio of 230% with advantages ofbetter flexibility and uniformity in “230% room temperaturemagnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions”, PhysicsLetters 86, 092502 (2005).

For a low RA application, the MR ratio of CoFeB/Mg/MgO/CoFeB MTJs canreach 138% at RA=2.4 ohm/μm² according to K. Tsunekawa et al. in “Gianttunneling magnetoresistance effect in low resistanceCoFeB/MgO(001)/CoFeB magnetic tunnel junctions for read headapplications”, Applied Physics Letters 87, 072503 (2005). In this case,a DC-sputtered Mg layer was inserted between the CoFeB pinned layer andan RF-sputtered MgO layer, an idea initially proposed by T. Linn et al.in U.S. Pat. No. 6,841,395 to prevent oxidation of the bottom electrode(CoFe) in a CoFe/MgO (reactive sputtering)/NiFe structure. Also, a Tagetter pre-sputtering prior to RF sputtering a MgO layer can achieve 55%TMR with 0.4 ohm/μm² as reported by Y. Nagamine et al. in “Ultralowresistance-area product of 0.4 ohm/μm² and high magnetoresistance above50% in CoFeB/MgO/CoFeB magnetic junctions”, Appl. Phys. Lett., 89,162507 (2006).

In order to achieve a smaller Hc but still maintain a high TMR ratio,the industry tends to use CoFeB as the free layer in a TMR sensor.Unfortunately, the magnetostriction (λ) of a CoFeB free layer isconsiderably greater than the maximum acceptable value of about 5×10⁻⁶for high density memory applications. A free layer made of a CoFe/NiFecomposite has been employed instead of CoFeB because of its low λ andsoft magnetic properties. However, when using a CoFe/NiFe free layer,the TMR ratio will degrade. Another approach is a composite free layercontaining CoFeB with a positive λ and a NiFe layer with a negative λ toresult in a low λ and magnetic softness for the free layer. However, aCoFeB/NiFe type free layer structure is not usable because directcontact of CoFeB with NiFe will cause a drastic drop in the MR (TMR)ratio. Thus, an improved free layer in a TMR sensor is needed thatprovides low magnetostriction in combination with a high TMR ratio, lowRA value, and low coercivity.

U.S. Pat. No. 7,333,306 and U.S. Patent Application 2007/0047159 show atri-layered free layer represented by CoFe/CoFeB/NiFe to achieve lowcoercivity and low magnetostriction for either GMR-CPP or TMR sensors.

In U.S. Patent Application No. 2007/0139827, a free layer is describedthat includes a sense enhancing layer (Ta) sandwiched between a firstferromagnetic layer and a second ferromagnetic layer. The firstferromagnetic layer has a positive magnetostriction and is made of CoFeBor CoFe based alloys while the second ferromagnetic layer has a negativemagnetostriction and is comprised of CoFe, Ni, or NiFe based alloys.

U.S. Patent Application No. 2007/0188942 discloses a free layercomprised three layers that include a lower NiFe or CoFe layer on thetunnel barrier layer, a Ta, Ru, Cu, or W spacer, and a CoFeB, CoFe, orNiFe upper layer.

In U.S. Patent Application 2007/0242396, a free layer is disclosed thatcomprises FeCo, a Heusler alloy, and NiFe.

U.S. Patent Application No. 2008/0061388 discloses a free layer with aCoFeB/Ru/CoFeTaB configuration.

U.S. Pat. No. 6,982,932 and U.S. Patent Application 2008/0152834describe free layers that are laminations of NiFe, CoFe, and CoFeB.

SUMMARY OF THE INVENTION

One objective of the present invention is to provide a composite freelayer that simultaneously achieves low magnetostriction, low RA with lowcoercivity, and a high magnetoresistive (MR) ratio in a sensorstructure.

A second objective of the present invention is to provide a compositefree layer according to the first objective that may be incorporated ina CIP-GMR, CPP-GMR, or TMR sensor.

A further objective is to provide a method of forming a composite freelayer according to the first and second objectives that can be readilyimplemented in a manufacturing process and is cost effective.

According to one embodiment of the present invention, these objectivesare achieved by forming a TMR sensor on a suitable substrate such as abottom shield in a read head. The TMR sensor may have a bottom spinvalve configuration comprised of a seed layer, AFM layer, pinned layer,tunnel barrier layer, free layer, and capping layer which are formedsequentially on the bottom shield. The tunnel barrier layer ispreferably made of MgO, and the free layer has a composite structurerepresented by FL1/INS/FL2 where FL1 and FL2 are magnetic layers thatmay be comprised of more than one material and INS is an insertion layerwhich is preferably an alloy comprised of at least one magnetic elementincluding Co, Fe, and Ni and at least one non-magnetic element such asTa, Ti, W, Zr, Hf, Nb, Mo, V, and Cr. B may be employed as anon-magnetic element in a quaternary alloy. The MR ratio and couplingstrength between the FL1 and FL2 layers is modified by adjusting thethickness and non-magnetic content in the insertion layer. Strongmagnetic coupling between FL1 and FL2 is necessary for high performanceand good device stability.

In a second embodiment, the composite free layer described previously isformed in a GMR sensor that has a bottom spin valve structure comprisedof a seed layer, AFM layer, pinned layer, non-magnetic spacer, freelayer, and capping layer. The GMR sensor may have a CIP or CPPconfiguration.

Typically, the stack of layers in the TMR or GMR sensor is laid down ina sputtering system. All of the layers may be deposited in the samesputter chamber. In the TMR embodiment, the MgO tunnel barrier ispreferably formed by depositing a first Mg layer on the pinned layerfollowed by a natural oxidation process on the first Mg layer to form aMgO layer and then depositing a second Mg layer on the MgO layer. Theoxidation step is performed in an oxidation chamber within thesputtering system. One or more annealing steps may be employed to setthe magnetization direction of the AFM and pinned layers. The TMR stackis patterned by a conventional method prior to forming a top shield onthe capping layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a TMR stack of layers with acomposite free layer according to one embodiment of the presentinvention.

FIG. 2 is a cross-sectional view showing a TMR stack of layers that hasbeen patterned to form a MTJ element during an intermediate step offabricating the TMR sensor according to one embodiment of the presentinvention.

FIG. 3 is a cross-sectional view of a TMR read head having a MTJ elementinterposed between a top shield and bottom shield and formed accordingto an embodiment of the present invention.

FIG. 4 is a cross-sectional view of a GMR read head having a compositefree layer according to a second embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is a high performance magnetoresistive sensorhaving a composite free layer containing an insertion layer comprised ofat least one magnetic element and at least one non-magnetic element anda method for making the same. While the exemplary embodiment depicts aTMR sensor in a read head, the present invention may be employed inother devices based on a magnetoresistive element such as a GMR-CPP orGMR-CIP sensor. The TMR or GMR sensor may have a bottom spin valve, topspin valve, or multilayer spin value configuration as appreciated bythose skilled in the art. Magnetoresistive (MR) ratio may be usedinterchangeably with TMR ratio when referring to TMR sensors.

Referring to FIG. 1, a portion of a partially formed TMR sensor 1 of thepresent invention is shown from the plane of an air bearing surface(ABS). There is a substrate 10 that in one embodiment is a bottom leadotherwise known as a bottom shield (S1) which may be a NiFe layer about2 microns thick that is formed by a conventional method on asubstructure (not shown). Typically, a first gap layer (not shown) isformed on the bottom shield. It should be understood that thesubstructure may be comprised of a wafer made of AlTiC, for example.

A TMR stack is formed on the substrate 10 and in the exemplaryembodiment has a bottom spin valve configuration wherein a seed layer14, AFM layer 15, pinned layer 16, tunnel barrier layer 17, compositefree layer 18, and capping layer 19 are sequentially formed on thesubstrate. The seed layer 14 may have a thickness of 10 to 100 Angstromsand is preferably a Ta/Ru composite but Ta, Ta/NiCr, Ta/Cu, Ta/Cr orother seed layer configurations may be employed, instead. The seed layer14 serves to promote a smooth and uniform grain structure in overlyinglayers. Above the seed layer 14 is an AFM layer 15 used to pin themagnetization direction of the overlying pinned layer 16, and inparticular, the outer portion or AP2 layer (not shown). The AFM layer 15has a thickness from 40 to 300 Angstroms and is preferably comprised ofIrMn with a thickness between 40 and 70 Angstroms. Optionally, one ofPtMn, NiMn, OsMn, RuMn, RhMn, PdMn, RuRhMn, or MnPtPd may be selected asthe AFM layer.

The pinned layer 16 preferably has a synthetic anti-parallel (SyAP)configuration represented by AP2/Ru/AP1 where a coupling layer made ofRu, Rh, or Ir, for example, is sandwiched between an AP2 layer and anAP1 layer (not shown). The AP2 layer which is also referred to as theouter pinned layer is formed on the AFM layer 15 and may be made of CoFewith a composition of about 10 atomic % Fe and with a thickness of about10 to 50 Angstroms. The magnetic moment of the AP2 layer is pinned in adirection anti-parallel to the magnetic moment of the AP1 layer. Forexample, the AP2 layer may have a magnetic moment oriented along the“+x” direction while the AP1 layer has a magnetic moment in the “−x”direction. A slight difference in thickness between the AP2 and AP1layers produces a small net magnetic moment for the pinned layer 16along the easy axis direction of the TMR sensor to be patterned in alater step. Exchange coupling between the AP2 layer and the AP1 layer isfacilitated by a coupling layer that is preferably comprised of Ru witha thickness from 3 to 9 Angstroms. The AP1 layer is also referred to asthe inner pinned layer and may be a single layer or a composite layer.In one aspect, the AP1 layer is amorphous in order to provide a moreuniform surface on which to form the tunnel barrier layer 17.

In the exemplary embodiment that features a bottom spin valveconfiguration, the tunnel barrier layer 17 is comprised of MgO because aMgO tunnel barrier is known to provide a higher TMR ratio than a TMRstack made with an AlOx or TiOx tunnel barrier. The MgO tunnel barrierlayer is preferably formed by depositing a first Mg layer having athickness between 4 and 14 Angstroms on the pinned layer 16, oxidizingthe Mg layer with a natural oxidation (NOX) process, and then depositinga second Mg layer with a thickness of 2 to 8 Angstroms on the oxidizedfirst Mg layer. The tunnel barrier is believed to have a MgO/Mgconfiguration immediately following deposition of the second Mg layer.The second Mg layer serves to protect the subsequently deposited freelayer from oxidation. However, during an annealing step followingdeposition of the entire TMR stack of layers, oxygen may diffuse fromthe lower MgO layer into the upper Mg layer. Therefore, the final tunnelbarrier layer composition is generally considered to be MgO. Note thatthe RA and MR ratio for the TMR sensor may be adjusted by varying thethickness of the two Mg layers in tunnel barrier layer 17 and by varyingthe natural oxidation time and pressure. A thicker MgO layer resultingfrom longer oxidation time and/or higher pressure would increase the RAvalue.

All layers in the TMR stack may be deposited in a DC sputtering chamberof a sputtering system such as an Anelva C-7100 sputter depositionsystem which includes ultra high vacuum DC magnetron sputter chamberswith multiple targets and at least one oxidation chamber. Typically, thesputter deposition process involves an argon sputter gas and a basepressure between 5×10⁻⁸ and 5×10⁻⁹ torr. A lower pressure enables moreuniform films to be deposited.

The NOX process may be performed in an oxidation chamber within thesputter deposition system by applying an oxygen pressure of 0.1 mTorr to1 Torr for about 15 to 300 seconds. In the exemplary embodiment, noheating or cooling is applied to the oxidation chamber during the NOXprocess. Oxygen pressure between 10⁻⁶ and 1 Torr is preferred for anoxidation time mentioned above in order to achieve a RA in the range of0.5 to 5 ohm-um². A mixture of O₂ with other inert gases such as Ar, Kr,or Xe may also be used for better control of the oxidation process.

The present invention anticipates that a MgO barrier layer 17 could beformed by depositing a MgO layer on a pinned layer with a rf-sputteringor reactive sputtering method. It should be understood that theperformance of a TMR sensor fabricated with a barrier layer comprised ofsputtered MgO will not be as desirable as one made according to thepreferred embodiment of this invention. For example, the inventors haveobserved that the final RA uniformity (1σ) of 0.6 um circular devices ismore than 10% when the MgO tunnel barrier layer is rf-sputtered and lessthan 3% when the MgO tunnel barrier is formed by DC sputtering a Mglayer followed by a NOX process.

Optionally, other materials such as TiOx, AlTiO, MgZnO, Al₂O₃, ZnO,ZrOx, or HfOx, or any combination of the aforementioned materialsincluding MgO may be used as the tunnel barrier layer 17.

Previously, we disclosed composite free layer structures that result inTMR or GMR sensors having high TMR ratio, low Hc with low λ, and a lowRA value. For example, in related patent application Ser. No.11/983,718, we described a CoFeB/non-magnetic/NiFe trilayerconfiguration for a free layer where the non-magnetic layer is made ofHf, V, Zr, Nb, Ta, Mo, or Cr. High TMR ratio is achieved because CoFeBand NiFe layers are separated by a Ta insertion layer, for example.CoFeB and NiFe are magnetically coupled through orange-peel typecoupling which tends to align the magnetic moments in parallelconfiguration. However, this coupling is relatively weak and in a realdevice has to compete with magnetostatic coupling from the edge of thetwo ferromagnetic free layers which tends to align the magnetic momentsof the CoFeB and NiFe layers anti-parallel. Moreover, stress inducedanisotropy tends to align the moments for CoFeB and NiFe perpendicularto one another because of the opposite signs of magnetostriction. As aresult, magnetic noise for this free layer structure is rather high.Although signal amplitude is high, improvement in signal to noise ratio(SNR) is limited and a further enhancement in SNR is desirable.

In related patent application Ser. No. 11/983,329, we demonstrated thata free layer with a trilayer configuration comprised of at least oneCoFe layer having a (+) λ value and at least one negative λ layer suchas CoB or FeB can yield a high performance sensor. However, we weremotivated to further modify the composite free layer to enable greaterflexibility in adjusting the magnetic properties therein. We havediscovered that by modifying the middle layer in a trilayerconfiguration represented by FL1/INS/FL2 such that the insertion (INS)layer includes at least one magnetic element and at least onenon-magnetic element, both the thickness and non-magnetic content of theinsertion layer may be used to adjust the TMR ratio, λ, and couplingstrength between the ferromagnetic FL1 and FL2 layers.

Returning to FIG. 1, an important feature of the present invention isthe composite free layer 18 formed on the tunnel barrier layer 17. Inone embodiment, the free layer 18 has a composition represented byFL1/INS/FL2 where FL1 and FL2 are ferromagnetic layers 18 a, 18 c,respectively, and INS is an insertion layer 18 b which is an alloy madeof at least one magnetic element and at least one non-magnetic element.The at least one magnetic element is selected from Fe, Co, and Ni, andthe at least one non-magnetic element is selected from Ta, Ti, W, Zr,Hf, Nb, Mo, V, Mg, and Cr. B may be employed as a non-magnetic elementin an insertion layer comprised of a quaternary alloy. Insertion layer18 b preferably has an overall non-magnetic character with a thicknessfrom 2 to 10 Angstroms. By keeping the insertion layer 18 b thicknessconstant and increasing the magnetic element content, the couplingstrength between the FL1 and FL2 layers is increased but TMR ratio isdecreased. Lowering the magnetic element content in the insertion layer18 b will have the opposite effect. A strong coupling (Hcp) between theFL1 layer 18 a and FL2 layer 18 c is desirable in order to minimizenoise in the sensor and improve the signal to noise (SNR) ratio.Moreover, magnetic stability improves as the Hcp value increases.

Preferably, the FL1 layer 18 a is ferromagnetic and has a compositionrepresented by Co_(W)Fe_((100-W)) or [Co_(W)Fe_((100-W))]_((100-y))B_(Y)where w is from 0 to about 100% and y is from 10 atomic % to about 40atomic %, or the FL1 layer may be an alloy of one of the aforementionedcompositions comprised of one or more additional elements such as Ni,Ta, Mn, Ti, W, Zr, Hf, Tb, Mg, and Nb. The FL1 layer 18 a may be asingle layer or a composite with multiple layers having a thickness from2 to 40 Angstroms and is relied upon to provide a high dR/R ratio. Forexample, when one of CoFeB, CoFe/CoFeB, or CoFe/CoFeB/CoFe is selectedas FL1 layer 18 a, the dR/R (TMR ratio) is advantageously increased.When FL1 layer 18 a is a composite of two or more layers includingCoFeB, the thickness of the CoFeB layer is preferably greater than theother layer or layers in the composite in order to maximize dR/R. Notethat a CoFeB layer generally has a large (+) λ value which must beoffset by a (−) λ value in one or more other layers in the free layer 18in order to achieve a magnetostriction less than about 5×10⁻⁶ for highperformance.

The FL2 layer 18 c is also ferromagnetic and may be a single layer or acomposite having two or more layers and a thickness from 2 to 50Angstroms. In one aspect, the FL2 layer 18 c is comprised of aCo_(W)Fe_((100-W)) layer where w is from 0 to about 100 atomic %, aNi_(Z)Fe_((100-Z)) layer where z is from about 70% to 100%, or acombination of the aforementioned layers. Furthermore, the embodimentencompasses a FL2 layer 18 c that is an alloy wherein CoFe or NiFe arecombined with one or more elements selected from Ni, Ta, Mn, Ti, W, Zr,Hf, Tb, Nb, or B. For example, the FL2 layer 18 c may have a CoFe, NiFe,or CoFe/NiFe/CoFe composition. In an embodiment wherein CoFe/NiFe/CoFeis selected as the FL2 layer 18 c, the NiFe layer is preferablysubstantially thicker than the CoFe layers in order to take advantage ofthe soft magnetic character of NiFe and the (−) λ contribution from aNiFe material to offset the (+) λ value in FL1 layer 18 a. In a FL2layer 18 c, a NiFe layer may be sandwiched between two CoFe layers toavoid the NiFe layer contacting an insertion layer containing Ta sinceadjoining Ta and NiFe layers are known to form a so called “dead zone”that degrades dR/R. In general, FL2 materials or composite structureshaving a (−) λ value and that promote strong coupling through theinsertion layer 18 b with the FL1 layer 18 a are preferred. However, FL2layer 18 c may have a small (+) λ value when used in combination with aFL1 layer 18 a having a small (+) λ value.

With regard to insertion layer 18 b, it should be understood that analloy of a magnetic element and a non-magnetic element may be formed byco-sputtering a target of each element in a sputter deposition chamber.When multiple elements are involved as in a CoFeBTa alloy, for example,a CoFeB target may be co-sputtered with a Ta target to achieve thedesired composition in the resulting CoFeBTa insertion layer. In apreferred embodiment, the ratio of CoFeB:Ta in the CoFeBTa alloy isabout 2:1 to give an overall non-magnetic character for the insertionlayer 18 b. However, the CoFeB:Ta ratio may vary from about 1:1 to 4:1and still retain the advantages provided by the composite free layer 18of the present invention. In general, a CoFeB composition in the CoFeBTaalloy is preferred where Co is from about 40 to 70 atomic %, Fe is from20 to 40 atomic %, and B is from 10 to 30 atomic %. In another preferredembodiment, CoTa is selected as the insertion layer 18 b and has a Co:Taratio of about 2:1. Optionally, the Co content may be varied between 50and 80 atomic % to afford a Co:Ta ratio between 1:1 and 4:1 and anoverall non-magnetic character. As stated previously, increasing thecontent of the magnetic element which is Co in this example willincrease the coupling strength between the FL1 and FL2 layers but willlower the TMR ratio. Decreasing the Co content to near 50 atomic % willlower the coupling strength but will increase the TMR ratio.

In one embodiment, the capping layer 19 formed on FL2 layer 18 c may becomprised of Ru, Ta, or a combination of Ru and Ta. Optionally, thecapping layer 19 may be made of other materials used in the art.

Once the TMR stack is complete, the partially formed read head 1 may beannealed in a vacuum oven within the range of 240° C. to 340° C. with anapplied magnetic field of at least 2000 Oe, and preferably 8000 Oe forabout 2 to 10 hours to set the pinned layer and free layer magnetizationdirections. It should be understood that under certain conditions,depending upon the time and temperature involved in the anneal process,the tunnel barrier layer 17 may become a uniform MgO tunnel barrierlayer as unreacted oxygen in the lower MgO layer diffuses into theadjacent Mg layer in the MgO/Mg stack.

Referring to FIG. 2, the TMR stack is patterned by following aconventional process sequence. For example, a photoresist layer 20 maybe coated on the capping layer 19. After the photoresist layer 20 ispatterned, a reactive ion etch (RIE), ion beam etch (IBE), or the likeis used to remove underlying layers in the TMR stack that are exposed byopenings in the photoresist layer. The etch process may stop on thefirst gap layer above the bottom shield 10 or between the bottom shieldand a barrier layer (not shown) to give a TMR sensor with a top surface19 a and sidewalls 21.

Referring to FIG. 3, an insulating layer 22 may be deposited along thesidewalls 21 of the TMR sensor. The photoresist layer 20 is then removedby a lift off process. A top lead otherwise known as a top shield 25 isthen deposited on the insulating layer 22 and top surface 19 a of theTMR sensor. Similar to the bottom shield 10, the top shield 25 may alsobe a NiFe layer about 2 microns thick. The TMR read head 1 may befurther comprised of a second gap layer (not shown) disposed on the topshield 25.

In a second embodiment represented by FIG. 4 that relates to a GMR-CPPor GMR-CIP device, the magnetoresistive element 1 is a stack of layerswhich is the same as described previously except the tunnel barrierlayer 17 is replaced by a non-magnetic spacer layer 27 that may be Cu,for example. The FL1 layer 18 a contacts a top surface of thenon-magnetic spacer 27. The magnetoresistive element 1 may be patternedby the same sequence of steps described previously with respect to FIG.2.

Comparative Example 1

An experiment was conducted to demonstrate the improved performanceachieved by implementing a free layer in a TMR sensor according to thepresent invention. Two TMR stacks hereafter referred to as MTJ Sample Aand Sample B and shown in Table 1 were fabricated as reference MTJs.Samples A and B have a TMR structure similar to that of the presentinvention except the insertion layer in the composite free layer hasonly a non-magnetic element and does not include a magnetic element. AllTMR stacks in Table 1 have a composition represented byTa/Ru/IrMn/CoFe/Ru/CoFe/MgO/free layer/capping layer. Ta/Ru is acomposite seed layer wherein both Ta and Ru layers have a 20 Angstromthickness. The AFM layer is IrMn and has a 70 Angstrom thickness. Thepinned layer has an AP2/Ru/AP1 structure in which the AP2 layer is a 25Angstrom thick Co₇₀Fe₃₀ layer, the Ru coupling layer has a 7.5 Angstromthickness, and the AP1 layer is a 25 Angstrom thick CO₇₀Fe₃₀ layer. TheMgO tunnel barrier was formed by depositing a 7 Angstrom thick lower Mglayer that was subjected to a NOX process before a 3 Angstrom thickupper Mg layer was deposited. The capping layer in this example is Ru/Tawherein the lower Ru layer is 10 Angstroms thick and the upper Ta layeris 60 Angstroms thick. The free layer has a FL1/insertion layer/FL2configuration in which FL1 is Co₉₀Fe₁₀3/CO₆₀Fe₂₀B₂₀20/CO₉₀Fe₁₀3 and FL2is Co₉₀Fe₁₀3/Ni₉₀Fe₁₀40/Co₉₀Fe₁₀3 where the numbers following CoFe,NiFe, and CoFeB indicate the thickness of that particular layer. SamplesC and D have an insertion layer according to the present inventionwherein at least one magnetic element and at least one non-magneticelement is included. The TMR stack was formed on a NiFe shield and wasannealed under vacuum at 280° C. for 5 hours with an applied field of8000 Oe.

TABLE 1 Magnetic properties of TMR sensors with Ta/Ru/IrMn/CoFe/Ru/CoFe/MgO/free/cap configuration where free layer is CoFe3/CoFeB20/CoFe3/INS/CoFe3/NiFe40/CoFe2 MTJ Hcp Sample Insertion Layer (INS)Composition RA dR/R (Oe) A Ta (1 Angstrom) 1.2 57% 860 B Ta (3Angstroms) 1.2 60% 100 C CoFeBTa or CoTa (6 Angstroms) 1.2 63% 780 DCoFeBTa or CoTa (4 Angstroms) 1.2 61% 960

As we previously disclosed in related patent application Ser. No.11/983,718, a Ta insertion layer between two ferromagnetic layers in acomposite free layer can improve the magnetoresistive (TMR) ratio.Increasing the Ta thickness from 1 Angstrom in Sample A to 3 Angstromsin Sample B provides a dR/R gain from 57% to 60% because thicker Ta ispreferred for blocking the impact of a NiFe layer contacting a CoFeBlayer. However, the coupling field between the two ferromagnetic layers(Hcp) decreases rapidly with increasing Ta thickness which isundesirable because of a negative influence on device stability.

Samples C and D in Table 1 demonstrate that a high coupling field can berealized simultaneously with high dR/R and low RA when an insertionlayer according to the present invention is inserted between theCoFe/CoFeB/CoFe and CoFe/NiFe/CoFe layers. For example, by selecting a 6Angstrom thick film of CoFeBTa or CoTa as the insertion layer (SampleC), there is a significant gain in dR/R to 63% while Hcp remains high at780 Oe. The CoFeB:Ta or Co:Ta composition ratio is about 2:1 and thesingle layer of CoFeBTa or CoTa is non-magnetic at this composition. Asstated earlier, by decreasing the insertion layer thickness (Sample D),dR/R decreases but Hcp increases. On the other hand, increasing theinsertion layer thickness above 6A (not shown) would increase dR/R butlower the Hcp value. Further optimization of dR/R and Hcp is possible byadjusting the magnetic:non-magnetic element ratio in the insertionlayer. Moreover, λ for the composite free layer may be adjusted byvarying the composition or thickness of the NiFe layer with minimaleffect on dR/R.

All samples listed in Table 1 have reasonably good magnetic softnesswith a coercivity (Hc) around 4 to 5 Oe and λ of about 1×10⁻⁶. Magneticproperties were obtained from 0.8 micron circular devices. It should beunderstood that the dR/R values will increase as the sensor sizedecreases.

The advantages of the present invention are that a high TMR ratio ofgreater than 60% can be achieved simultaneously with a low RA value (<2ohm-um²) and low magnetostriction which is a significant improvementover conventional TMR sensors (MTJs) based on a FeCo/NiFe free layer(low dR/R ratio), or based on a FeCo/CoFeB free layer (highmagnetostriction). Furthermore, soft magnetic properties (low Hc) arerealized with a composite FL1/INS/FL2 free layer composition asdisclosed herein.

The free layers disclosed in the embodiments found herein may befabricated without additional cost since no new sputtering targets orsputter chambers are required. Furthermore, a low temperature annealprocess may be employed which is compatible with the processes formaking GMR sensors. Therefore, there is no change in process flow andrelated processes compared with current manufacturing schemes.

While this invention has been particularly shown and described withreference to, the preferred embodiment thereof, it will be understood bythose skilled in the art that various changes in form and details may bemade without departing from the spirit and scope of this invention.

1. A magnetoresistive element in a magnetic device, comprising: (a) astack of layers comprised of a seed layer, anti-ferromagnetic (AFM)layer, and a pinned layer sequentially formed on a substrate; (b) atunnel barrier layer with a top surface formed on the pinned layer; (c)a composite free layer contacting the top surface of the tunnel barrierlayer; said composite free layer is comprised of: (1) a firstferromagnetic layer comprised of one or more of Co_(W)Fe_((100-W)),[Co_(W)Fe_((100-W))]_((100-y))B_(Y) where w is from 0 to about 100% andy is from 10 atomic % to about 40 atomic %, and an alloy of one of theaforementioned compositions comprised of one or more additional elementsincluding Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, and Nb, said firstferromagnetic layer has a positive magnetostriction and contacts the topsurface of the tunnel barrier layer; (2) an insertion layer formed onthe first ferromagnetic layer and including at least one magneticelement selected from Fe, Co, and Ni and at least one non-magneticelement selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Mg, or Cr; and (3) asecond ferromagnetic layer comprised of one or more ofCo_(W)Fe_((100-W)) where w is from 0 to about 100 atomic %,Ni_(Z)Fe_((100-Z)) where z is from about 70% to 100%, and an alloywherein CoFe or NiFe are combined with one or more elements selectedfrom Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, and B, said second ferromagneticlayer has a negative magnetostriction and is formed on the insertionlayer; and (d) a capping layer formed on the second ferromagnetic layerin the composite free layer.
 2. The magnetoresistive element of claim 1wherein the first ferromagnetic layer has a thickness from about 2 to 40Angstroms and is CoFeB, CoFe/CoFeB, or CoFe/CoFeB/CoFe.
 3. Themagnetoresistive element of claim 1 wherein the insertion layer has athickness from about 2 to 10 Angstroms and has a CoTa compositionwherein the ratio of Co to Ta is from about 1:1 to 4:1.
 4. Themagnetoresistive element of claim 1 wherein the insertion layer has athickness from about 2 to 10 Angstroms and has a CoFeBTa compositionwherein the ratio of CoFeB to Ta is from about 1:1 to 4:1.
 5. Themagnetoresistive element of claim 1 wherein the second ferromagneticlayer has a thickness from about 2 to 50 Angstroms and is CoFe, NiFe, orCoFe/NiFe/CoFe.
 6. The magnetoresistive element of claim 1 wherein thetunnel barrier layer is comprised of one or more of MgO, MgZnO, ZnO,Al₂O₃, TiOx, AlTiO, HfOx and ZrOx.
 7. A magnetoresistive element in amagnetic device, comprising: (a) a stack of layers comprised of a seedlayer, anti-ferromagnetic (AFM) layer, and a pinned layer sequentiallyformed on a substrate; (b) a non-magnetic spacer layer with a topsurface formed on the pinned layer; (c) a composite free layercontacting the top surface of the non-magnetic spacer layer; saidcomposite free layer is comprised of: (1) a first ferromagnetic layercomprised of one or more of Co_(W)Fe_((100-W)),[Co_(W)Fe_((100-W))]_((100-y))B_(Y) where w is from 0 to about 100% andy is from 10 atomic % to about 40 atomic %, and an alloy of one of theaforementioned compositions comprised of one or more additional elementsincluding Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, and Nb, said firstferromagnetic layer has a positive magnetostriction and contacts the topsurface of the non-magnetic spacer layer; (2) an insertion layer formedon the first ferromagnetic layer and including at least one magneticelement selected from Fe, Co, and Ni and at least one non-magneticelement selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Mg, and Cr; and (3)a second ferromagnetic layer comprised of one or more ofCo_(W)Fe_((100-W)) where w is from 0 to about 100 atomic %,Ni_(Z)Fe_((100-Z)) where z is from 0 to 100%, and an alloy wherein CoFeor NiFe are combined with one or more elements selected from Ni, Ta, Mn,Ti, W, Zr, Hf, Tb, Nb, and B, said second ferromagnetic layer has anegative magnetostriction and is formed on the insertion layer; and (d)a capping layer formed on the second ferromagnetic layer in thecomposite free layer.
 8. The magnetoresistive element of claim 7 whereinthe magnetic device is a GMR-CPP sensor or a GMR-CIP sensor.
 9. Themagnetoresistive element of claim 7 wherein the first ferromagneticlayer has a thickness from about 2 to 40 Angstroms and is CoFeB,CoFe/CoFeB, or CoFe/CoFeB/CoFe.
 10. The magnetoresistive element ofclaim 7 wherein the insertion layer has a thickness from about 2 to 10Angstroms and has a CoTa composition wherein the ratio of Co to Ta isabout 1:1 to 4:1.
 11. The magnetoresistive element of claim 7 whereinthe insertion layer has a thickness from about 2 to 10 Angstroms and hasa CoFeBTa composition wherein the ratio of CoFeB to Ta is about 1:1 to4:1.
 12. The magnetoresistive element of claim 7 wherein the secondferromagnetic layer has a thickness from about 2 to 50 Angstroms and isCoFe, NiFe, or CoFe/NiFe/CoFe.
 13. A method of forming amagnetoresistive element in a TMR sensor, comprising: (a) sequentiallyforming a seed layer, AFM layer, and a pinned layer on a substrate; (b)forming a tunnel barrier layer with a top surface on said pinned layer;(c) forming a composite free layer on the tunnel barrier layer, saidcomposite free layer is comprised of: (1) a first ferromagnetic layercomprised of one or more of Co_(W)Fe_((100-W)),[Co_(W)Fe_((100-W))]_((100-y))B_(Y) where w is from 0 to about 100% andy is from 10 atomic % to about 40 atomic %, and an alloy of one of theaforementioned compositions comprised of one or more additional elementsincluding Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, and Nb, said firstferromagnetic layer has a positive magnetostriction and contacts the topsurface of the tunnel barrier layer; (2) an insertion layer formed onthe first ferromagnetic layer and including at least one magneticelement selected from Fe, Co, and Ni and at least one non-magneticelement selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Mg, and Cr; and (3)a second ferromagnetic layer comprised of one or more ofCo_(W)Fe_((100-W)) where w is from 0 to about 100 atomic %,Ni_(Z)Fe_((100-Z)) where z is from about 70% to 100%, and an alloywherein CoFe or NiFe are combined with one or more elements selectedfrom Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, and B, said second ferromagneticlayer has a negative magnetostriction and is formed on the insertionlayer; and (d) forming a capping layer on the composite free layer. 14.The method of claim 13 wherein the tunnel barrier layer is comprised ofone or more of MgO, MgZnO, ZnO, Al₂O₃, TiOx, AlTiO, HfOx and ZrOx. 15.The method of claim 14 wherein formation of the MgO tunnel barrier layeris comprised of depositing a first Mg layer, performing a naturaloxidation process to form a MgO layer, and then depositing a second Mglayer on the MgO layer.
 16. The method of claim 15 further comprised ofannealing a stack of layers comprised of the tunnel barrier layer andcomposite free layer.
 17. The method of claim 13 wherein the firstferromagnetic layer has a thickness from about 2 to 40 Angstroms and isCoFeB, CoFe/CoFeB, or CoFe/CoFeB/CoFe.
 18. The method of claim 13wherein the insertion layer has a thickness from about 2 to 10 Angstromsand has a CoTa composition wherein the ratio of Co to Ta is from about1:1 to 4:1.
 19. The method of claim 13 wherein the insertion layer has athickness from about 2 to 10 Angstroms and has a CoFeBTa compositionwherein the ratio of CoFeB to Ta is from about 1:1 to 4:1.
 20. Themethod of claim 13 wherein the second ferromagnetic layer has athickness from about 2 to 50 Angstroms and is CoFe, NiFe, orCoFe/NiFe/CoFe.